manufacturer:
Operating Temperature:
Supplier Device Package:
Number of Circuits:
Amplifier Type:
Current - Output / Channel:
Current - Input Bias:
Voltage - Input Offset:
Voltage - Supply, Single/Dual (±):
Odonata Lepidoptera products 17
Image part manufacturer quantitas partus tempus Unit Price buy Description Packaging Operating Temperature Package / Case Supplier Device Package Number of Circuits Mounting Type Amplifier Type Current - Output / Channel Slew Rate Current - Input Bias Voltage - Input Offset Voltage - Supply, Single/Dual (±)
JL411BPA
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs 50pA 30μV -
JM38510/11904BPA
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs 50pA 5mV -
M38510/11904BPA
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs (Min) 50pA 5mV -
M38510/11904BPX
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs (Min) 50pA 5mV -
TA75W558FU,LF
Toshiba Semiconductor and Storage
6,000
III dies
-
MOQ: 3000  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
Tape & Reel (TR) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
10,303
III dies
-
MOQ: 1  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
Cut Tape (CT) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
10,303
III dies
-
MOQ: 1  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
- -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
JL411BPA
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs 50pA 30μV -
JM38510/11904BPA
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs 50pA 5mV -
M38510/11904BPA
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs (Min) 50pA 5mV -
M38510/11904BPX
Texas Instruments
Quaestiones
-
-
MOQ: 0  MPQ: 1
IC OP AMP JFET 3MHZ 8CDIP
Tube -55°C ~ 125°C 8-CDIP (0.300",7.62mm) 8-CDIP 1 Through Hole J-FET - 7 V/μs (Min) 50pA 5mV -
TA75W558FU,LF
Toshiba Semiconductor and Storage
6,000
III dies
-
MOQ: 3000  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
Tape & Reel (TR) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
10,303
III dies
-
MOQ: 1  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
Cut Tape (CT) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
10,303
III dies
-
MOQ: 1  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
- -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
6,000
III dies
-
MOQ: 3000  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
Tape & Reel (TR) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
10,303
III dies
-
MOQ: 1  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
Cut Tape (CT) -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V
TA75W558FU,LF
Toshiba Semiconductor and Storage
10,303
III dies
-
MOQ: 1  MPQ: 1
IC OPAMP GP 3MHZ 8SSOP
- -40°C ~ 85°C 8-TSSOP,8-MSOP (0.110",2.80mm Width) SM8 2 Surface Mount General Purpose 40mA 1 V/μs 60nA 500μV ±4 V ~ 18 V