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EPC2100
- Description :
- TRANS GAN ASYMMETRICAL HALF BRID
- package :
- Die
- Hæc est pars Manufacturer
- Datasheet (1)
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- Current - Continuous Drain (Id) @ 25°C :
- 10A (Ta)，40A (Ta)
- Drain to Source Voltage (Vdss) :
- 30V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 4.9nC @ 15V，19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds :
- 475pF @ 15V，1960pF @ 15V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Die
- Packaging :
- Tape & Reel (TR)
- Power - Max :
- -
- Rds On (Max) @ Id，Vgs :
- 8.2 mOhm @ 25A，5V，2.1 mOhm @ 25A，5V
- Series :
- eGaN
- Supplier Device Package :
- Die
- Vgs(th) (Max) @ Id :
- 2.5V @ 4mA，2.5V @ 16mA
