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EMH75T2R
- Description :
- TRANS 2NPN PREBIAS 0.15W EMT6
- package :
- EMT6
- Hæc est pars Manufacturer
- Datasheet (1)
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- Current - Collector (Ic) (Max) :
- 100mA
- Current - Collector Cutoff (Max) :
- 500nA
- DC Current Gain (hFE) (Min) @ Ic，Vce :
- 80 @ 5mA，10V
- Frequency - Transition :
- 250MHz
- Mounting Type :
- Surface Mount
- Package / Case :
- SOT-563，SOT-666
- Packaging :
- -
- Power - Max :
- 150mW
- Resistor - Base (R1) :
- 4.7 kOhms
- Resistor - Emitter Base (R2) :
- 47 kOhms
- Series :
- -
- Supplier Device Package :
- EMT6
- Transistor Type :
- 2 NPN - Pre-Biased (Dual)
- Vce Saturation (Max) @ Ib，Ic :
- 150mV @ 500μA，5mA
- Voltage - Collector Emitter Breakdown (Max) :
- 50V
