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TPD3215M
- Description :
- CASCODE GAN HB 600V 70A MODULE
- package :
- Module
- Hæc est pars Manufacturer
- Datasheet (0)
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- Current - Continuous Drain (Id) @ 25°C :
- 70A (Tc)
- Drain to Source Voltage (Vdss) :
- 600V
- FET Feature :
- GaNFET (Gallium Nitride)
- FET Type :
- 2 N-Channel (Half Bridge)
- Gate Charge (Qg) (Max) @ Vgs :
- 28nC @ 8V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2260pF @ 100V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 150°C (TJ)
- Package / Case :
- Module
- Packaging :
- Bulk
- Power - Max :
- 470W
- Rds On (Max) @ Id，Vgs :
- 34 mOhm @ 30A，8V
- Series :
- -
- Supplier Device Package :
- Module
- Vgs(th) (Max) @ Id :
- -
